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Power Electronics
Power Semiconductor Devices
Triggering and Characteristics of SCR

Questions mapped to Triggering and Characteristics of SCR under Power Semiconductor Devices.

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Q#1 Power Semiconductor Devices GATE EE 2026 (Set 1) MCQ +1 mark -0.33 marks

Consider the circuit shown in Figure (a). A gate pulse  is applied between time instants  and . After , during the MOSFET turn OFF process, it experiences a voltage overshoot.

Based on the  waveforms shown in Figure (b), which one of the following options is correct?

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Q#2 Power Semiconductor Devices GATE EE 2023 (Set 1) NAT +2 marks -0 marks

The circuit shown in the figure has reached steady state with thyristor '' in OFF condition. Assume that the latching and holding currents of the thyristor are zero. The thyristor is turned  at . The duration in microseconds for which the thyristor would conduct, before it turns off, is ___ (Round off to 2 decimal places).

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Q#3 Power Semiconductor Devices GATE EE 2014 (Set 2) NAT +2 marks -0 marks

The SCR in the circuit shown has a latching current of 40mA. A gate pulse of 50 μs is applied to the SCR. The maximum value of R in  to ensure successful firing of the SCR is ___________.

 

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Q#4 Power Semiconductor Devices GATE EE 2012 (Set 1) MCQ +1 mark -0.33 marks

The typical ratio of latching current to holding current in a 20A thyristor is

5.0      

2.0

1.0      

0.5

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Q#5 Power Semiconductor Devices GATE EE 2009 (Set 1) MCQ +1 mark -0.33 marks

An SCR is considered to be a semi-controlled device because

It can be turned OFF but not ON with a gate pulse

It conducts only during one half-cycle of an alternating current wave

It can be turned ON but not OFF with a gate pulse

It can be turned ON only during one half-cycle of an alternating voltage wave

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Q#6 Power Semiconductor Devices GATE EE 2007 (Set 1) MCQ +2 marks -0.66 marks

A 1:1 Pulse Transformer (PT) is used to trigger the SCR in the adjacent figure. The SCR is rated at 1.5 kV,250A with 250mA, 150mA, and 150mA, 100mA. The SCR is connected to an inductive load, where L = 150mH in series with a small resistance and the supply voltage is 200V dc. The forward drops of all transistors/diodes and gate-cathode junction during ON state are 1.0 V

 

The resistance R should be

4.7 kΩ

470 kΩ

47 Ω     

4.7 Ω

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Q#7 Power Semiconductor Devices GATE EE 2007 (Set 1) MCQ +2 marks -0.66 marks

A 1:1 Pulse Transformer (PT) is used to trigger the SCR in the adjacent figure. The SCR is rated at 1.5 kV,250A with 250mA, 150mA, and 150mA, 100mA. The SCR is connected to an inductive load, where L = 150mH in series with a small resistance and the supply voltage is 200V dc. The forward drops of all transistors/diodes and gate-cathode junction during ON state are 1.0 V

 

The minimum approximate volt-second rating of the pulse transformer suitable for triggering the SCR should be: (volt-second rating is the maximum of product of the voltage and the width of the pulse that may be applied)

2000µV-s

200µV-s

20µV-s      

2.0µV-s

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Q#8 Power Semiconductor Devices GATE EE 2006 (Set 1) MCQ +2 marks -0.66 marks

An SCR having a turn ON time of 5µsec, latching current of 50mA and holding current of 40mA is triggered by a short duration pulse and is used in the circuit shown in figure. The minimum pulse width required to turn the SCR ON will be

Q70.jpg 

251 µsec

150 µsec

100 µsec

5 µsec

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Q#9 Power Semiconductor Devices GATE EE 2004 (Set 1) MCQ +1 mark -0.33 marks

The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of 10 mA, for guaranteed turn-on. The value of R required for the thyristor to turn on reliably under all conditions of variation is

 

10000 Ω

1600 Ω

1200 Ω

800 Ω

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Q#10 Power Semiconductor Devices GATE EE 2003 (Set 1) MCQ +1 mark -0.33 marks

Figure shows a thyristor with the standard terminations of anode (A), cathode (K), gate (G) and the different junctions named J1, J2 and J3. When the thyristor is turned on and conducting

 

J1 and J2 are forward biased and J3 is reverse biased

J1 and J3 are forward biased and J2 is reverse biased

J1 is forward biased and J2 and J3 are reverse biased

J1, J2 and J3 are all forward biased

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Q#11 Power Semiconductor Devices GATE EE 2001 (Set 1) MCQ +1 mark -0.33 marks

The main reason for connecting a pulse transformer at the output stage of a thyristor triggering circuit is to

Amplifying the power of the triggering pulse

Provide electrical isolation

Reduce the turn on time of the thyristor

Avoid spurious triggering of the thyristor due to noise.

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Q#12 Power Semiconductor Devices GATE EE 1995 (Set 1) NAT +2 marks -0 marks

Consider the thyristor circuit of figure. The Thyristor is given a triggering pulse after every 10ms. Calculate the duration for which the thyristor remains ON after each triggering pulse. Assume ideal devices and explain briefly the basis.

 

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Q#13 Power Semiconductor Devices GATE EE 1994 (Set 1) MSQ +1 mark -0 marks

A triac can be triggered by a gate pulse of ______________ polarity.

It can be triggered by a positive gate pulse.

It can be triggered by a negative gate pulse.

It can only be triggered when the gate pulse is the same polarity as MT2​.

It is a bidirectional device that can conduct in both halves of an AC cycle.

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Q#14 Power Semiconductor Devices GATE EE 1991 (Set 1) MCQ +1 mark -0.33 marks

The operating state that distinguishes a silicon controlled rectifier (SCR) from a diode is

Forward conduction state

Forwarding blocking state

Reverse conduction state

Reverse blocking state

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