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Power Electronics
Power Semiconductor Devices

Practice questions from Power Semiconductor Devices.

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Q#1 Power Semiconductor Devices GATE EE 2024 (Set 1) MCQ +1 mark -0.33 marks

If the following switching devices have similar power ratings, which one of them is the fastest?

SCR

GTO

IGBT

Power MOSFET

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Q#2 Power Semiconductor Devices GATE EE 2023 (Set 1) MSQ +1 mark -0 marks

A semiconductor switch needs to block voltage  of only one polarity  during OFF state as shown in figure (i) and carry current in both directions during ON state as shown in figure (ii). Which of the following switch combination(s) will realize the same?

Fig. (i)

Fig. (ii)

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Q#3 Power Semiconductor Devices GATE EE 2023 (Set 1) NAT +2 marks -0 marks

The circuit shown in the figure has reached steady state with thyristor '' in OFF condition. Assume that the latching and holding currents of the thyristor are zero. The thyristor is turned  at . The duration in microseconds for which the thyristor would conduct, before it turns off, is ___ (Round off to 2 decimal places).

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Q#4 Power Semiconductor Devices GATE EE 2022 (Set 1) MCQ +1 mark -0.33 marks

A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this purpose?

IGBT

Thyristor

MOSFET

BJT

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Q#5 Power Semiconductor Devices GATE EE 2020 (Set 1) NAT +1 mark -0 marks

A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery characteristics of the diode. D, represented approximately as a piecewise linear plot of current vs time at diode turn-off.  is a parasitic inductance due to the wiring of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering 1, 2, 3 or 4) at which the IGBT experiences the highest current stress is

 

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Q#6 Power Semiconductor Devices GATE EE 2018 (Set 1) MCQ +1 mark -0.33 marks

Four power semiconductor devices are shown in the figure along with their relevant terminals. The device(s) that can carry dc current continuously in the direction shown when gated appropriately is (are)

 

Triac only

Triae and MOSFET

Triac and GTO

Thyristor and Triac

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Q#7 Power Semiconductor Devices GATE EE 2016 (Set 1) NAT +1 mark -0 marks

A steady dc current of 100A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode (D) are shown in the Figure (b) and (c), respectively. The conduction power loss in the power module (S, D), in watts, is ________________.

 

 

 

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Q#8 Power Semiconductor Devices GATE EE 2016 (Set 1) NAT +2 marks -0 marks

The voltage  across and the current  through a semiconductor switch during a turn-ON transition are shown in figure. The energy dissipated during the turn-ON transition, in mJ, is ____________.

 

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Q#9 Power Semiconductor Devices GATE EE 2016 (Set 1) MCQ +1 mark -0.33 marks

For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?         

All the four are majority carrier devices

All the four are minority carrier devices

IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.

MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.

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Q#10 Power Semiconductor Devices GATE EE 2014 (Set 1) MCQ +1 mark -0.33 marks

Figure shows four electronic switches (i), (ii), (iii) and (iv). Which of the switches can block voltages of either polarity (applied between terminals ‘a’ and ‘b’) when the active device is in the OFF state?

 

     (i)                    (ii)               (iii)              (iv)

(i), (ii) and (iii)    

(ii), (iii) and (iv)

(ii) and (iii)      

(i) and (iv)

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Q#11 Power Semiconductor Devices GATE EE 2014 (Set 2) NAT +2 marks -0 marks

The SCR in the circuit shown has a latching current of 40mA. A gate pulse of 50 μs is applied to the SCR. The maximum value of R in  to ensure successful firing of the SCR is ___________.

 

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Q#12 Power Semiconductor Devices GATE EE 2012 (Set 1) MCQ +1 mark -0.33 marks

The typical ratio of latching current to holding current in a 20A thyristor is

5.0      

2.0

1.0      

0.5

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Q#13 Power Semiconductor Devices GATE EE 2011 (Set 1) MCQ +1 mark -0.33 marks

Circuit turn-off time of an SCR is defined as the time

Taken by the SCR to turn off

Required for the SCR current to become zero

For which the SCR is reverse biased by the commutation circuit

For which the SCR is reverse biased to reduce its current below the holding current

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Q#14 Power Semiconductor Devices GATE EE 2010 (Set 1) MCQ +1 mark -0.33 marks

Figure shows a composite switch consisting of a power transistor (BJT) in series with a diode. Assuming that the transistor switch and the diode are ideal, the I-V characteristics of the composite switch is

 

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Q#15 Power Semiconductor Devices GATE EE 2010 (Set 1) MCQ +2 marks -0.66 marks

The L-C circuit shown in the figure has an impedance L = I mH and a capacitance C = 10uF.

53.jpg 

The initial current through the inductor is zero, while the initial capacitor voltage is 100V. The switch is closed at t = 0. The current i through the circuit is:

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Q#16 Power Semiconductor Devices GATE EE 2010 (Set 1) MCQ +2 marks -0.66 marks

The L-C circuit shown in the figure has an impedance L = I mH and a capacitance C = 10uF.

53.jpg 

The LC circuit shown in the figure has an inductance  and capacitance . The LC circuit is used to commutate a thyristor, which is initially carrying a current of 5A as shown in the figure below. The values and initial of  and  are same as in previous question. The switch is closed ae . If the forward drop is negligible, the time taken for the device to turn off is

 

54.jpg 

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Q#17 Power Semiconductor Devices GATE EE 2009 (Set 1) MCQ +1 mark -0.33 marks

An SCR is considered to be a semi-controlled device because

It can be turned OFF but not ON with a gate pulse

It conducts only during one half-cycle of an alternating current wave

It can be turned ON but not OFF with a gate pulse

It can be turned ON only during one half-cycle of an alternating voltage wave

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Q#18 Power Semiconductor Devices GATE EE 2009 (Set 1) MCQ +2 marks -0.66 marks

Match the switch arrangements on the top row to the steady-state V-I characteristics on the lower row.  The steady state operating points are shown by large black dots.

        

        

        

A-I, B-II, C-III, D-IV

A-II, B-IV, C-I, D-III

A-IV, B-III, C-I, D-II

A-IV, B-III, C-II, D-I

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Q#19 Power Semiconductor Devices GATE EE 2007 (Set 1) MCQ +2 marks -0.66 marks

The circuit in the figure is a current commutated dc-dc chopper where. is the main SCR and is the auxiliary SCR. The load current is constant at 10A. is ON.  is triggered at t = 0. is turned OFF between

 

0 µs < t  ≤  25 µs

25 µs < t  ≤ 50 µs

50 µs < t   ≤ 75 µs

75 µs < t  ≤100 µs

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Q#20 Power Semiconductor Devices GATE EE 2007 (Set 1) MCQ +2 marks -0.66 marks

A 1:1 Pulse Transformer (PT) is used to trigger the SCR in the adjacent figure. The SCR is rated at 1.5 kV,250A with 250mA, 150mA, and 150mA, 100mA. The SCR is connected to an inductive load, where L = 150mH in series with a small resistance and the supply voltage is 200V dc. The forward drops of all transistors/diodes and gate-cathode junction during ON state are 1.0 V

 

The resistance R should be

4.7 kΩ

470 kΩ

47 Ω     

4.7 Ω

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Q#21 Power Semiconductor Devices GATE EE 2007 (Set 1) MCQ +2 marks -0.66 marks

A 1:1 Pulse Transformer (PT) is used to trigger the SCR in the adjacent figure. The SCR is rated at 1.5 kV,250A with 250mA, 150mA, and 150mA, 100mA. The SCR is connected to an inductive load, where L = 150mH in series with a small resistance and the supply voltage is 200V dc. The forward drops of all transistors/diodes and gate-cathode junction during ON state are 1.0 V

 

The minimum approximate volt-second rating of the pulse transformer suitable for triggering the SCR should be: (volt-second rating is the maximum of product of the voltage and the width of the pulse that may be applied)

2000µV-s

200µV-s

20µV-s      

2.0µV-s

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Q#22 Power Semiconductor Devices GATE EE 2006 (Set 1) MCQ +2 marks -0.66 marks

A voltage commutation circuit is shown in figure.  If the turn off time of the SCRs is 50µ sec and a safety margin of 2 is considered, then what will be the approximate minimum value of capacitor required for proper commutation?

 

2.88 µF

1.44 µF

0.91µF

0.72 µF

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Q#23 Power Semiconductor Devices GATE EE 2006 (Set 1) MCQ +2 marks -0.66 marks

An SCR having a turn ON time of 5µsec, latching current of 50mA and holding current of 40mA is triggered by a short duration pulse and is used in the circuit shown in figure. The minimum pulse width required to turn the SCR ON will be

Q70.jpg 

251 µsec

150 µsec

100 µsec

5 µsec

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Q#24 Power Semiconductor Devices GATE EE 2005 (Set 1) MCQ +1 mark -0.33 marks

The conduction loss versus device current characteristic of a power MOSFET is best approximated by

A parabola

A straight line

A rectangular hyperbola

An exponentially decaying function

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Q#25 Power Semiconductor Devices GATE EE 2005 (Set 1) MCQ +2 marks -0.66 marks

Figure shows the voltage across a power semiconductor device and the current through the device during a switching transition. Is the transition a turn ON transition or a turn OFF transition? What is the energy lost during the transition?  

 

Turn ON,

Turn OFF,

Turn ON,

Turn OFF,

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Q#26 Power Semiconductor Devices GATE EE 2005 (Set 1) MCQ +2 marks -0.66 marks

An electronic switch S is required to block voltages of either polarity during its OFF state as shown in Figure a. This switch is required to conduct in only one direction during its ON state as shown in Figure b.

Which of the following are valid realizations of the switch S?

Only P

P and Q

P and R

R and S

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Q#27 Power Semiconductor Devices GATE EE 2004 (Set 1) MCQ +1 mark -0.33 marks

The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of 10 mA, for guaranteed turn-on. The value of R required for the thyristor to turn on reliably under all conditions of variation is

 

10000 Ω

1600 Ω

1200 Ω

800 Ω

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Q#28 Power Semiconductor Devices GATE EE 2004 (Set 1) MCQ +2 marks -0.66 marks

A MOSFET rated for 15 A, carries a periodic current as shown in figure. The ON state resistance of the MOSFET is 0.15Ω. The average ON state loss in the MOSFET is

 

33.8 W

15.0 W

7.5 W

3.8 W

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Q#29 Power Semiconductor Devices GATE EE 2003 (Set 1) MCQ +1 mark -0.33 marks

Figure shows a thyristor with the standard terminations of anode (A), cathode (K), gate (G) and the different junctions named J1, J2 and J3. When the thyristor is turned on and conducting

 

J1 and J2 are forward biased and J3 is reverse biased

J1 and J3 are forward biased and J2 is reverse biased

J1 is forward biased and J2 and J3 are reverse biased

J1, J2 and J3 are all forward biased

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Q#30 Power Semiconductor Devices GATE EE 2003 (Set 1) MCQ +1 mark -0.33 marks

Figure shown a MOSFET with an integral body diode. It is employed as a power switching device in the ON and OFF states through appropriate control. The ON and OFF states of the switch are given on the plane by

 

Fig. A

Fig. B

Fig. C

Fig. D

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Q#31 Power Semiconductor Devices GATE EE 2001 (Set 1) MCQ +1 mark -0.33 marks

The main reason for connecting a pulse transformer at the output stage of a thyristor triggering circuit is to

Amplifying the power of the triggering pulse

Provide electrical isolation

Reduce the turn on time of the thyristor

Avoid spurious triggering of the thyristor due to noise.

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Q#32 Power Semiconductor Devices GATE EE 2000 (Set 1) MSQ +2 marks -0 marks

For perfectly balanced operation a certain three phase ac power electronic circuit generates odd harmonic currents of order five and seven in the three phases of the ac mains. Identify which of these harmonics form a positive-sequence system, and which form a negative – sequence system.

The 5th harmonic forms a negative-sequence system.

The 5th harmonic forms a positive-sequence system.

The 7th harmonic forms a positive-sequence system.

The 7th harmonic forms a zero-sequence system.

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Q#33 Power Semiconductor Devices GATE EE 1998 (Set 1) MCQ +1 mark -0.33 marks

The uncontrolled electric switch employed in power electric converters is:

Thyristor

Bipolar junction transistor

Diode

MOSFET

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Q#34 Power Semiconductor Devices GATE EE 1998 (Set 1) MCQ +1 mark -0.33 marks

The MOSFET switch in its on-state may be considered equivalent to:

Resistor

Inductor

Capacitor      

Battery

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Q#35 Power Semiconductor Devices GATE EE 1998 (Set 1) MCQ +1 mark -0.33 marks

In a commutation circuit employed to turn off an SCR, satisfactory turn-off is obtained when

Circuit turn-off time < device turn-off time

Circuit turn-off time > device turn-off time

Circuit time constant > device turn-off time

Circuit time constant < device turn-off time

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Q#36 Power Semiconductor Devices GATE EE 1997 (Set 1) MCQ +1 mark -0.33 marks

If a diode is connected in anti-parallel with a thyristor, then

Both turn-off power loss and turn-off time decrease

Turn-off power loss decreases but turn-off time increases

Turn-off power loss increases, but turn-off time decreases

None of the above

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Q#37 Power Semiconductor Devices GATE EE 1996 (Set 1) MCQ +1 mark -0.33 marks

Which semiconductor power device out of the following is not a current triggered device?

Thyristor

G.T.O.

Triac      

MOSFET

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Q#38 Power Semiconductor Devices GATE EE 1996 (Set 1) MCQ +1 mark -0.33 marks

The triac can be used only in

Inverter

Rectifier

Multi quadrant chopper

Cyclo converter

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Q#39 Power Semiconductor Devices GATE EE 1996 (Set 1) MCQ +1 mark -0.33 marks

Which of the following does not cause permanent damage of an SCR?

High current

High rate of rise of current

High temperature rise

High rate of rise of voltage

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Q#40 Power Semiconductor Devices GATE EE 1995 (Set 1) NAT +1 mark -0 marks

Figure, show two thyristors each rated 500A (continuous) sharing a load current. Current through thyristor Y is 120A. The current through thyristor X will be nearly ______________ A.

 

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Q#41 Power Semiconductor Devices GATE EE 1995 (Set 1) NAT +2 marks -0 marks

Consider the thyristor circuit of figure. The Thyristor is given a triggering pulse after every 10ms. Calculate the duration for which the thyristor remains ON after each triggering pulse. Assume ideal devices and explain briefly the basis.

 

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Q#42 Power Semiconductor Devices GATE EE 1994 (Set 1) MCQ +1 mark -0.33 marks

A switched mode power supply operating at 20 kHz to 100 kHz range uses as the main switching element

Thyristor

MOSFET

Triac

UJT

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Q#43 Power Semiconductor Devices GATE EE 1994 (Set 1) MSQ +1 mark -0 marks

A triac can be triggered by a gate pulse of ______________ polarity.

It can be triggered by a positive gate pulse.

It can be triggered by a negative gate pulse.

It can only be triggered when the gate pulse is the same polarity as MT2​.

It is a bidirectional device that can conduct in both halves of an AC cycle.

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Q#44 Power Semiconductor Devices GATE EE 1993 (Set 1) MCQ +1 mark -0.33 marks

The thermal resistance between the body of a power semiconductor device and the ambient is expressed as

Voltage across the device divided by current through the device

Average power dissipated in the device divided by the square of the RMS current in the device

Average power dissipated in the device divided by the temperature difference from body to ambient

Temperature difference from body to ambient divided by average power dissipated in the device

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Q#45 Power Semiconductor Devices GATE EE 1992 (Set 1) MCQ +1 mark -0.33 marks

In the circuit of figure, the switch ‘S’ is closed at t=0 with . In the steady state  equals

 

200V

100V

zero

-100V

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Q#46 Power Semiconductor Devices GATE EE 1991 (Set 1) MCQ +1 mark -0.33 marks

The operating state that distinguishes a silicon controlled rectifier (SCR) from a diode is

Forward conduction state

Forwarding blocking state

Reverse conduction state

Reverse blocking state

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Q#47 Power Semiconductor Devices GATE EE 1991 (Set 1) MSQ +2 marks -0 marks

Match the functions of the following protective elements in SCR applications:

(a) => (R)

(b) => (P)

(c) => (S)

(d) => (Q)

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