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Analog Electronics
BJT
DC Analysis and Biasing Circuits of BJT

Questions mapped to DC Analysis and Biasing Circuits of BJT under BJT.

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Q#1 BJT GATE EE 2026 (Set 1) NAT +1 mark -0 marks

In the linear regulator circuit shown, the base to emitter voltage  of the BJT is 0.6 V . The Zener diode clamps the base voltage to 5.4 V. Ignore the biasing current of the Zener diode and BJT.

The maximum possible efficiency of the regulator circuit is  %

(Round off to one decimal place)

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Q#2 BJT GATE EE 2024 (Set 1) MCQ +2 marks -0.66 marks

A BJT biasing circuit is shown in the figure, where  and . The Quiescent Point values of  and  are respectively

 and

 and

 and

 and

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Q#3 BJT GATE EE 2023 (Set 1) NAT +2 marks -0 marks

The Zener diode in circuit has a breakdown voltage of . The current gain  of the transistor in the active region in 99. Ignore base-emitter voltage drop . The current through the 20Ω resistance in milliamperes is _________ (Round off to 2 decimal places).

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Q#4 BJT GATE EE 2021 (Set 1) NAT +1 mark -0 marks

In the BJT circuit shown, beta of the PNP transistor is 100. Assume . .

The voltage across  will be 5 V when  is ……… kΩ. (Round off 2 decimal places)

A picture containing text, antenna

Description automatically generated

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Q#5 BJT GATE EE 2018 (Set 1) NAT +2 marks -0 marks

In the circuit shown in the figure, the bipolar junction transistor (BJT) has a current gain. The base-emitter voltage drop is a constant. The value of the Thevenin equivalent resistance  (in ) as shown in the figure is ________(up to 2 decimal places).

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Q#6 BJT GATE EE 2017 (Set 1) NAT +2 marks -0 marks

The circuit shown in the figure uses matched transistors with a thermal voltage . The base currents of the transistors are negligible. The value of the resistance R in  that is required to provide 1 bias current for the differential amplifier block shown is __________ . (Give the answer up to one decimal place.)

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Q#7 BJT GATE EE 2017 (Set 2) MCQ +2 marks -0.66 marks

For the circuit shown in the figure below, it is given that . The transistor has and when the B-E junction is forward biased.

For this circuit, the value of  is

43

92

121

129

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Q#8 BJT GATE EE 2016 (Set 1) NAT +1 mark -0 marks

A transistor circuit is given below. The Zener diode breakdown voltage is 5.3V as shown. Take base to emitter voltage drop to be 0.6V. The value of the current gain  is __________.


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Q#9 BJT GATE EE 2015 (Set 1) NAT +1 mark -0 marks

In the given circuit, the silicon transistor has  and a collector voltage . Then the ratio of  and  is ____________.         

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Q#10 BJT GATE EE 2015 (Set 2) MCQ +1 mark -0.33 marks

When a bipolar junction transistor is operating in the saturation mode, which one of the following statements is TRUE about the state of its collector – base (CB) and the base – emitter (BE) junctions?

The CB junction is forward biased and the BE junction is reverse biased.

The CB junction is reverse biased and the BE junction is forward biased.

Both the CB and BE junctions are forward biased.

Both the CB and BE junctions are reverse biased.

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Q#11 BJT GATE EE 2014 (Set 2) NAT +1 mark -0 marks

The transistor in the given circuit should always be in active region. Take , . The maximum value of RC in  which can be used, is __________.

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Q#12 BJT GATE EE 2011 (Set 1) MCQ +2 marks -0.66 marks

The transistor used in the circuit shown below has a of 30 and  is negligible.

If the forward voltage drop of diode is 0.7V, then the current through collector will be

168mA

108mA

20.54mA

5.36mA

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Q#13 BJT GATE EE 2010 (Set 1) MCQ +2 marks -0.66 marks

The transistor circuit shown uses a silicon transistor with  and a dc current gain of 100. The value of  is

4.65V

5V

6.3V

7.23V

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Q#14 BJT GATE EE 2008 (Set 1) MCQ +2 marks -0.66 marks

Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the β of the transistors to be very high and the forward voltage drop in diodes to be 0.7V, the value of current I is

0 mA

3.6 mA

4.3 mA

5.7 mA

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Q#15 BJT GATE EE 2007 (Set 1) MCQ +1 mark -0.33 marks

The common emitter forward current gain of the transistor shown is .

The transistor is operating in

Saturation region

Cutoff region

Reverse active region

Forward active region

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Q#16 BJT GATE EE 2007 (Set 1) MCQ +1 mark -0.33 marks

The three-terminal linear voltage regulator is connected to a  load resistor as shown in the figure. If  is 10 V, what is the power dissipated in the transistor?

0.6 W

2.4 W

4.2 W

5.4 W

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Q#17 BJT GATE EE 2006 (Set 1) MCQ +2 marks -0.66 marks

Consider the circuit shown in figure.  If the β of the transistor is 39 and  is 20nA and the input voltage is +5V, then transistor would be operating in

Saturation region

Active region

Breakdown region

Cut-off region

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Q#18 BJT GATE EE 2005 (Set 1) MCQ +2 marks -0.66 marks

The common emitter amplifier shown in Figure is biased using a 1mA ideal current source. The approximate base current value is:        

0 µA

10 µA

100 µA

1000 µA

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Q#19 BJT GATE EE 2004 (Set 1) MCQ +1 mark -0.33 marks

Two perfectly matched silicon transistors are connected as shown in figure. The value of the current I is

0 mA

2.3 mA

4.3 mA

7.3 mA

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Q#20 BJT GATE EE 2004 (Set 1) MCQ +1 mark -0.33 marks

A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT

Both the base-emitter and base-collector junctions are reverse biased

The base-emitter junctions is reverse biased, and the base-collector junction is forward biased

The base-emitter junction is forward biased, and the base-collector junction is reverse biased

Both the base-emitter and base-collector junctions are forward biased

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Q#21 BJT GATE EE 2004 (Set 1) MCQ +2 marks -0.66 marks

In the Schmitt trigger circuit shown in figure, if , the output logic low level  is        

Q69.jpg

1.25 V

1.35 V

2.50 V

5.00 V

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Q#22 BJT GATE EE 2003 (Set 1) MCQ +1 mark -0.33 marks

In the circuit of Figure, assume that the transistor has . The value of collector current  of the transistor is approximately

[3.3/3.3] Ma

[3.3/(3.3+ 0.33)] mA

[3.3/33] mA

[3.3/(33+3.3)] mA

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Q#23 BJT GATE EE 2003 (Set 1) MCQ +2 marks -0.66 marks

In the circuit shown in Figure, the current gain (β) of the ideal transistor is 10. The operating point of the transistor  is

(40V, 4A)

(40V, 5A)

(0V, 4A)

(15V, 4A)

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Q#24 BJT GATE EE 2002 (Set 1) MSQ +2 marks -0 marks

For the circuit shown in Figure, and . Determine

 

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Q#25 BJT GATE EE 2000 (Set 1) MCQ +2 marks -0.66 marks

In the circuit of fig, the value of the base current  will be

0.0 micro amperes

18.2 micro amperes

26.7 micro amperes

40.0 micro amperes

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Q#26 BJT GATE EE 1998 (Set 1) MCQ +1 mark -0.33 marks

One of the applications of current mirror is:

Output current limiting

Obtaining a very high current gain

Current feedback

Temperature stabilized biasing

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Q#27 BJT GATE EE 1998 (Set 1) MCQ +2 marks -0.66 marks

A NPN, silicon transistor is meant for low-current audio amplification. Match its following characteristics against their values:

Characteristics                      Values

(a)                       (P) 0.7V

(b)                       (Q) 0.2V

(c)                       (R) 6V

                                           (S) 50V

(a) => (P)
(b) => (R)
(c) => (Q)

(a) => (R)
(b) => (S)
(c) => (Q)

(a) => (P)
(b) => (R)
(c) => (S)

(a) => (Q)
(b) => (R)
(c) => (S)

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Q#28 BJT GATE EE 1994 (Set 1) MCQ +1 mark -0.33 marks

In the transistor circuit shown in figure, collector-to-ground voltage is +20V. Which of the following is the probable cause of error?

Collector-emitter terminals shorted

Emitter to ground connection open

10 kΩ resistor open

Collector-base terminals shorted

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Q#29 BJT GATE EE 1991 (Set 1) MCQ +2 marks -0.66 marks

Figure below shows a common emitter amplifier. The quiescent collector voltage of the circuit is approximately

10 V

14 V

20 V

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