The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of +3 V is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be +Q. The total charge contained within the dashed box shown, upon

application of bias, expressed as a multiple of Q (absolute value in Coulombs, rounded off to the nearest integer) is ___________.

Given  is the gate-source voltage,  is the drain source voltage, and  is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

The enhancement type MOSFET in the circuit below operates according to the square law. , the threshold voltage  is 500 mV. Ignore channel length modulation. The output voltage  is

Assume that the N-channel MOSFET shown in Figure is ideal, and that its threshold voltage is +1.0V. The voltage  between nodes a and b is:

The charge distribution in a metal-dielectric-semiconductor specimen is shown in Figure.  The negative charge density decreases linearly in the semiconductor as shown. The electric field distribution is as shown in        

The value of R for which the PMOS transistor in figure will be biased in linear region is

The variation of drain current with gate-to-source voltage ( characteristic) of a MOSFET is shown in Figure. The MOSFET is

For the n-channel enhancement MOSFET shown in Figure, the threshold voltage . The drain current  of the MOSFET is 4 mA when the drain resistance  is . If the value of  is increased to , drain current  will become

An n-channel JFET, having a pinch off voltage  of −5V, shows a trans-conductance  of 1mA/V when the applied gate-to-source voltage  is -3V.  Its maximum trans-conductance (in mA/V) is

An enhancement type n-channel MOSFET is represented by the symbol