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Q#1
MOSFET
GATE EE 2020
NAT
+1 mark
-0 marks
The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of +3 V is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be +Q. The total charge contained within the dashed box shown, upon
application of bias, expressed as a multiple of Q (absolute value in Coulombs, rounded off to the nearest integer) is ___________.
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| Topic | Questions | Attempted | Correct | |
|---|---|---|---|---|
| Network Analysis | 268 | 0 | 0 | |
| Signals and Systems | 168 | 0 | 0 | |
| Control Systems | 262 | 0 | 0 | |
| Analog Electronics | 186 | 0 | 0 | |
| Digital Electronics | 150 | 0 | 0 | |
| Electrical Machines | 399 | 0 | 0 | |
| Power Electronics | 243 | 0 | 0 | |
| Power Systems | 350 | 0 | 0 | |
| EMFT EE | 111 | 0 | 0 | |
| Measurement | 160 | 0 | 0 | |
| Engineering Mathematics | 236 | 0 | 0 | |
| General Aptitude | 221 | 0 | 0 |
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