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Q#1 Power Semiconductor Devices GATE EE 1993 MCQ +1 mark -0.33 marks

The thermal resistance between the body of a power semiconductor device and the ambient is expressed as

Voltage across the device divided by current through the device

Average power dissipated in the device divided by the square of the RMS current in the device

Average power dissipated in the device divided by the temperature difference from body to ambient

Temperature difference from body to ambient divided by average power dissipated in the device

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Network Analysis 259 0 0
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Control Systems 201 0 0
Analog Electronics 180 0 0
Digital Electronics 148 0 0
Electrical Machines 390 0 0
Power Electronics 237 0 0
Power Systems 343 0 0
EMFT EE 9 0 0
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