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Power Electronics
Power Semiconductor Devices
Switch Characteristics

Questions mapped to Switch Characteristics under Power Semiconductor Devices.

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Q#1 Power Semiconductor Devices GATE EE 2026 (Set 1) MCQ +1 mark -0.33 marks

The figure shows a straight-line approximation for the forward characteristics of a power diode. A continuous on-state current of 15 A is flowing through the diode.

What is the power loss in the diode?

32.8 W

21.2 W

18.6 W

23.1 W

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Q#2 Power Semiconductor Devices GATE EE 2024 (Set 1) MCQ +1 mark -0.33 marks

If the following switching devices have similar power ratings, which one of them is the fastest?

SCR

GTO

IGBT

Power MOSFET

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Q#3 Power Semiconductor Devices GATE EE 2023 (Set 1) MSQ +1 mark -0 marks

A semiconductor switch needs to block voltage  of only one polarity  during OFF state as shown in figure (i) and carry current in both directions during ON state as shown in figure (ii). Which of the following switch combination(s) will realize the same?

Fig. (i)

Fig. (ii)

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Q#4 Power Semiconductor Devices GATE EE 2022 (Set 1) MCQ +1 mark -0.33 marks

A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this purpose?

IGBT

Thyristor

MOSFET

BJT

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Q#5 Power Semiconductor Devices GATE EE 2020 (Set 1) NAT +1 mark -0 marks

A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery characteristics of the diode. D, represented approximately as a piecewise linear plot of current vs time at diode turn-off.  is a parasitic inductance due to the wiring of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering 1, 2, 3 or 4) at which the IGBT experiences the highest current stress is

 

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Q#6 Power Semiconductor Devices GATE EE 2018 (Set 1) MCQ +1 mark -0.33 marks

Four power semiconductor devices are shown in the figure along with their relevant terminals. The device(s) that can carry dc current continuously in the direction shown when gated appropriately is (are)

 

Triac only

Triae and MOSFET

Triac and GTO

Thyristor and Triac

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Q#7 Power Semiconductor Devices GATE EE 2017 (Set 1) MCQ +1 mark -0.33 marks

For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?         

All the four are majority carrier devices

All the four are minority carrier devices

IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.

MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.

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Q#8 Power Semiconductor Devices GATE EE 2016 (Set 1) NAT +1 mark -0 marks

A steady dc current of 100A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode (D) are shown in the Figure (b) and (c), respectively. The conduction power loss in the power module (S, D), in watts, is ________________.

 

 

 

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Q#9 Power Semiconductor Devices GATE EE 2016 (Set 1) NAT +2 marks -0 marks

The voltage  across and the current  through a semiconductor switch during a turn-ON transition are shown in figure. The energy dissipated during the turn-ON transition, in mJ, is ____________.

 

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Q#10 Power Semiconductor Devices GATE EE 2014 (Set 1) MCQ +1 mark -0.33 marks

Figure shows four electronic switches (i), (ii), (iii) and (iv). Which of the switches can block voltages of either polarity (applied between terminals ‘a’ and ‘b’) when the active device is in the OFF state?

 

     (i)                    (ii)               (iii)              (iv)

(i), (ii) and (iii)    

(ii), (iii) and (iv)

(ii) and (iii)      

(i) and (iv)

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Q#11 Power Semiconductor Devices GATE EE 2010 (Set 1) MCQ +1 mark -0.33 marks

Figure shows a composite switch consisting of a power transistor (BJT) in series with a diode. Assuming that the transistor switch and the diode are ideal, the I-V characteristics of the composite switch is

 

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Q#12 Power Semiconductor Devices GATE EE 2010 (Set 1) MCQ +2 marks -0.66 marks

The L-C circuit shown in the figure has an impedance L = I mH and a capacitance C = 10uF.

53.jpg 

The initial current through the inductor is zero, while the initial capacitor voltage is 100V. The switch is closed at t = 0. The current i through the circuit is:

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Q#13 Power Semiconductor Devices GATE EE 2009 (Set 1) MCQ +2 marks -0.66 marks

Match the switch arrangements on the top row to the steady-state V-I characteristics on the lower row.  The steady state operating points are shown by large black dots.

        

        

        

A-I, B-II, C-III, D-IV

A-II, B-IV, C-I, D-III

A-IV, B-III, C-I, D-II

A-IV, B-III, C-II, D-I

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Q#14 Power Semiconductor Devices GATE EE 2005 (Set 1) MCQ +1 mark -0.33 marks

The conduction loss versus device current characteristic of a power MOSFET is best approximated by

A parabola

A straight line

A rectangular hyperbola

An exponentially decaying function

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Q#15 Power Semiconductor Devices GATE EE 2005 (Set 1) MCQ +2 marks -0.66 marks

Figure shows the voltage across a power semiconductor device and the current through the device during a switching transition. Is the transition a turn ON transition or a turn OFF transition? What is the energy lost during the transition?  

 

Turn ON,

Turn OFF,

Turn ON,

Turn OFF,

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Q#16 Power Semiconductor Devices GATE EE 2004 (Set 1) MCQ +2 marks -0.66 marks

A MOSFET rated for 15 A, carries a periodic current as shown in figure. The ON state resistance of the MOSFET is 0.15Ω. The average ON state loss in the MOSFET is

 

33.8 W

15.0 W

7.5 W

3.8 W

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Q#17 Power Semiconductor Devices GATE EE 2003 (Set 1) MCQ +1 mark -0.33 marks

Figure shown a MOSFET with an integral body diode. It is employed as a power switching device in the ON and OFF states through appropriate control. The ON and OFF states of the switch are given on the plane by

 

Fig. A

Fig. B

Fig. C

Fig. D

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Q#18 Power Semiconductor Devices GATE EE 1998 (Set 1) MCQ +1 mark -0.33 marks

The MOSFET switch in its on-state may be considered equivalent to:

Resistor

Inductor

Capacitor      

Battery

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Q#19 Power Semiconductor Devices GATE EE 1996 (Set 1) MCQ +1 mark -0.33 marks

Which semiconductor power device out of the following is not a current triggered device?

Thyristor

G.T.O.

Triac      

MOSFET

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Q#20 Power Semiconductor Devices GATE EE 1993 (Set 1) MCQ +1 mark -0.33 marks

The thermal resistance between the body of a power semiconductor device and the ambient is expressed as

Voltage across the device divided by current through the device

Average power dissipated in the device divided by the square of the RMS current in the device

Average power dissipated in the device divided by the temperature difference from body to ambient

Temperature difference from body to ambient divided by average power dissipated in the device

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Q#21 Power Semiconductor Devices GATE EE 1992 (Set 1) MCQ +1 mark -0.33 marks

In the circuit of figure, the switch ‘S’ is closed at t=0 with . In the steady state  equals

 

200V

100V

zero

-100V

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