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Q#1
MOSFET
GATE EC 2024
NAT
+2 marks
-0 marks
Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 
, a fixed positive oxide charge of 
at the oxide-silicon interface, and a metal work function of 
. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is 
. If the flatband voltage is 
, the work function of the 
-type silicon (in 
, rounded off to two decimal places) is________.
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