The quantum efficiencyand responsivity (R) at a wavelength (in µm) in a p-i-n photo-detector are related by

A Germanium sample of dimension 1cm1cm is illuminated with a 20mW, 600nm laser light source as shown in the figure. The illuminated sample surface has a 100nm of loss less Silicon dioxide layer that reflects

one-fourth of the incident light. From the remaining light, on-third of the power is reflected from the silicon dioxide Germanium interface, one-third is absorbed in the Germanium layer and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600nm isand the band gap is 0.66eV, the thickness of the Germanium layer, rounded off to 3 decimal places is ______µm

A solar cell of area , operating at 1.0 sun intensity, has a short circuit current of 20mA, and an open circuit voltage of 0.65V. Assuming room temperature operation and thermal equivalent voltage of 26mV, the open circuit voltage (in volts. correct to two decimal places) at 0.2 sun intensity is _______

For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density is and the open-circuit voltage is 0.451 V. Consider thermal voltage to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged,  (in volts) will be ________

The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100
mW/. The solar cell has an area of 3  and a fill factor of 0.7. The maximum efficiency (in %) of the device is ___________

When the optical power incident on a photodiode is  and the responsively is 0.8 A/W, the photocurrent generated (in ) is ______________ .

At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42eV and , respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength () ranges of incident radiation, is most suitable? (Given that: Plank’s constant is 6.62 ×  J-s, velocity of light is 3 ×  cm/s and charge of electron is 1.6 × C)

The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of band-gap = 1.1eV is ___________.

The longest wavelength that can be absorbed by silicon, which has the band-gap of 1.12eV, is 1.1μm. If the longest wavelength that can be absorbed by another material is 0.87μm, then the band-gap of this material is

Typical current voltage characteristic of a solar cell is given in the following figure by