Which of the following can be used as an n-type dopant for silicon?

Select the correct option(s).

The intrinsic carrier concentration of a semiconductor is  at 300 K.

If the electron and hole mobilities are  and , respectively, then the intrinsic resistivity of the semiconductor (in  ) at 300 K is _________.

(Charge of an electron .)

The electron mobility  in a non-degenerate germanium semiconductor at 300 K is .

The electron diffusivity  at 300 K (in , rounded off to the nearest integer) is _________.

(Consider the Boltzmann constant  and the charge of an electron .)

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (𝑇) dependence of free electron concentration (𝑛)

A non-degenerate n-type semiconductor has  neutral dopant atoms. Its Fermi level is located at  below the conduction band  and the donor energy level  has a degeneracy of 2. Assuming the thermal voltage to be . The difference between  and  (in , rounded off to two decimal places) is __________.

The free electron concentration profile  in a doped semiconductor at equilibrium is shown in the figure, where the points , and  mark three different positions. Which of the following statements is/are true?

In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as

For an intrinsic semiconductor at temperature , which of the following statement is true?

In an extrinsic semiconductor, the hole concentration is given to be  where  is the intrinsic carrier concentration of . The ratio of electron to hole mobility for equal hole and electron drift current is given as _________(rounded off to two decimal places).

In a semiconductor device, the Fermi-energy level is  above the valence band energy. The effective density of states in the valence band at  is . The thermal equilibrium hole concentration in silicon at  is  _________. (rounded off to two decimal places). Given KT at  is .