The correct circuit representation of the structure shown in the figure is

There are two photolithography systems: one with light source of wavelength (System 1) and another with light source of wavelength (System 2). Both photolithography systems are otherwise identical. If the minimum feature sizes that can be realized using System1 and System2 are  and  respectively, the ratio (correct to two decimal places) is

Which one of the following processes is preferred to form the gate dielectric  of MOSFETs?

In CMOS technology, shallow P-well or N-well regions can be formed using

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

A silicon wafer has  of oxide on it and is inserted in a furnace at a temperature above  for further oxidation in dry oxygen. The oxidation rate

If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is