The action of a JFET in its equivalent circuit can best be represented as a

The voltage gain  of the JFET amplifier shown in Figure is

(Assume)

An n-channel JEFT has  and. Its trans-conductance  (in milliohm) for an applied gate-to-source voltage  of -2V is

A JFET having  and  is used in a common-source configuration as shown in Figure. The JEFT capacitances are ,  and . Determine the ac small signal mid-band voltage gain  and the upper -3dB frequency of the circuit.

Two identical FETs, each characterized by the parameters  and  are connected in parallel. The composite FET is then characterized by the parameters

The JFET in the circuit of Figure, is characterized by the parameters  and.

Find

(a)  if  

(b)  if

An n-channel JEFT has  and .  Its maximum transconductance is __________mS.

Match the following

In a JEFT if

(A) The pinch-off voltage decreases

(B) The trans-conductance increases

(C) The transit time of the carriers in the channel is reduced

(1) The channel doping is reduced

(2) The channel length is increased

(3) The conductivity of channel is increased

(4) The channel length is reduced

(5) The Gate area is reduced

The transit time of the current carriers through the channel of an FET decides its switching characteristic. ( True=1, False=0)

The JFET in the circuit shown in figure has an  and . The value of the resistance  for a drain current  is (select the nearest value)        

A JFET with the following parameters is used in a single stage common source amplifier with a load resistance of . Calculate the high frequency cut off (upper 3 dB cut off frequency in Mhz) of the amplifier.