A Germanium sample of dimension 1cm1cm is illuminated with a 20mW, 600nm laser light source as shown in the figure. The illuminated sample surface has a 100nm of loss less Silicon dioxide layer that reflects

one-fourth of the incident light. From the remaining light, on-third of the power is reflected from the silicon dioxide Germanium interface, one-third is absorbed in the Germanium layer and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600nm isand the band gap is 0.66eV, the thickness of the Germanium layer, rounded off to 3 decimal places is ______µm