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Practice over 1000+ GATE-level questions from this topic!

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Q#1 Fabrication GATE EC 2008 MCQ +1 mark -0.33 marks

A silicon wafer has  of oxide on it and is inserted in a furnace at a temperature above  for further oxidation in dry oxygen. The oxidation rate

Is independent of current oxide thickness and temperature

Is independent of current oxide thickness but depends on temperature

Slow down as the oxide grows

Is zero as the existing oxide prevents further oxidation

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Network Analysis 273 0 0
Electronic Devices 224 0 0
Analog Electronics 395 0 0
Digital Electronics 352 0 0
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EMFT - ECE 273 0 0
Engineering Mathematics 280 0 0
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