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Practice over 1000+ GATE-level questions from this topic!

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Q#1 Fabrication GATE EC 2003 MCQ +2 marks -0.66 marks

If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is

P-Q-R-S

Q-S-R-P

R-P-S-Q

S-R-Q-P

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Analog Electronics 395 0 0
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EMFT - ECE 273 0 0
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