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Practice over 1000+ GATE-level questions from this topic!

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Q#1 Semiconductor Physics GATE EC 2017 MCQ +1 mark -0.33 marks

A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic in the GaAs crystal. Which one of the following statements is true?

Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites

Silicon atoms act as p- type dopants in Arsenic as well as Gallium sites

Silicon atoms act as n- type dopants in Arsenic as well as Gallium sites

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