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Practice over 1000+ GATE-level questions from this topic!

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Q#1 Semiconductor Physics GATE EC 2015 NAT +2 marks -0 marks

A dc voltage of 10 V is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm as shown in figure. The donor doping concentration  and the mobility of electrons are  and , respectively. The average time (in µs) taken by the electrons to move from one end of the bar to other end is ________.        

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