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Q#1 Semiconductor Physics GATE EC 2022 NAT +2 marks -0 marks

A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at , where  is the diffusion length of electrons. Assume electronic charge, . The profiles of photogeneration rate of carriers and the recombination rate of excess minority carriers  are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at  is __________  (rounded off to two decimal places).

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