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Q#1
PN Junction Theory
GATE EC 2015
MCQ
+1 mark
-0.33 marks
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
Both the P-region and the N-region are heavily doped
The N-region is heavily doped compared to the P-region
The P-region is heavily doped compared to the N-region
An intrinsic silicon region is inserted between the P-region and the N-region
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