Loading, please wait...

ExamDost
Learning Portal
Let's Prepare Together!
#PreparationAmplified!
Explore Packages
ExamDost
Learning Portal
 Prep plan My packages

Practice over 1000+ GATE-level questions from this topic!

Designed to match the latest GATE pattern with topic-wise precision, difficulty tagging, and detailed solutions.

Q#1 MOSFET - EDC GATE EC 2014 NAT +2 marks -0 marks

An ideal MOS capacitor has boron doping-concentration of in the substrate. When a gate voltage is applied, a depletion region of width 0.5 µm is formed with a surface (channel) potential of 0.2 V. Given that  and the relative permittivity of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/µm) in the oxide region is ________________.

Sign in to see the solution

Log in to view the explanation, track your attempts, and keep your progress.

Sign in to Unlock
Browse Practice Questions by Chapters / Topics in Browse Practice Questions by Chapters / Topics in GATE Electronics and Communications
Total Questions

Attempted

% Attempted

Correct

% Correct

Topic Questions Attempted Correct
Network Analysis 273 0 0
Electronic Devices 224 0 0
Analog Electronics 395 0 0
Digital Electronics 352 0 0
Signals and Systems 263 0 0
Control Systems 264 0 0
Communication System 340 0 0
EMFT - ECE 273 0 0
Engineering Mathematics 280 0 0
General Aptitude 240 0 0
Generate Personalized GATE Electronics and Communications Paper