Loading, please wait...

ExamDost
Learning Portal
Let's Prepare Together!
#PreparationAmplified!
Explore Packages
ExamDost
Learning Portal
 Prep plan My packages

Practice over 1000+ GATE-level questions from this topic!

Designed to match the latest GATE pattern with topic-wise precision, difficulty tagging, and detailed solutions.

Q#1 MOSFET - EDC GATE EC 2017 MCQ +1 mark -0.33 marks

An n-channel enhancement mode MOSFET is biased at , where is the gate-to-source voltage,  is the drain-to-source voltage and  is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a

voltage source with zero output impedance

voltage source with non-zero output impedance

current source with finite output impedance

current source with infinite output impedance

Sign in to see the solution

Log in to view the explanation, track your attempts, and keep your progress.

Sign in to Unlock
Browse Practice Questions by Chapters / Topics in Browse Practice Questions by Chapters / Topics in GATE Electronics and Communications
Total Questions

Attempted

% Attempted

Correct

% Correct

Topic Questions Attempted Correct
Network Analysis 273 0 0
Electronic Devices 224 0 0
Analog Electronics 395 0 0
Digital Electronics 352 0 0
Signals and Systems 263 0 0
Control Systems 264 0 0
Communication System 340 0 0
EMFT - ECE 273 0 0
Engineering Mathematics 280 0 0
General Aptitude 240 0 0
Generate Personalized GATE Electronics and Communications Paper