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Q#1 Semiconductor Physics GATE EC 1997 MSQ +2 marks -0 marks

An n-type silicon bar is doped uniformly by phosphorus atoms to a concentration. The bar has cross- section of  and length of 10 cm. It is illuminated uniformly for region  as shown in the figure is assume optical generation rate  Electron-Hole pairs per  per second, for this case. The hole lifetime and electron lifetime are equal, and equal to .

Evaluate the hole and electron diffusion currents at .

34.jpg

Following expressions and data can be used in this evaluation

 

Where ;

 coloumbs ;

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