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Q#1
PN Junction Theory
GATE EC 2017
MCQ
+1 mark
-0.33 marks
An 
Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of 
and 
corresponding to the 
and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be 
. What is the magnitude of the built-in potential of this device?
0.748 V
0.460 V
0.288 V
0.173 V
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