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Q#1
PN Junction Theory
GATE EC 2017
NAT
+2 marks
-0 marks
As shown, two Silicon (Si) abrupt p-n unction diodes are fabricated with uniform donor doping concentrations of
and
in the n-regions of the diodes, and uniform acceptor doping concentrations of
in the p-regions of the diodes, respectively. Assuming that the reverse bias voltage is built-in potentials of the diodes, the ratio
of their reverse bias capacitances for the same applied reverse bias, is _________ .

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