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Q#1 PN Junction Theory GATE EC 2017 NAT +2 marks -0 marks

As shown, two Silicon (Si) abrupt p-n unction diodes are fabricated with uniform donor doping concentrations of  and in the n-regions of the diodes, and uniform acceptor doping concentrations of  in the p-regions of the diodes, respectively. Assuming that the reverse bias voltage is built-in potentials of the diodes, the ratio  of their reverse bias capacitances for the same applied reverse bias, is _________ .  

D:\GATE 2017 FInal Files\ECE 2017\ECE 2017- Session 1 Diagram\Q 38.jpg

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