Login to track your progress, bookmark questions, and view history.
Practice over 1000+ GATE-level questions from this topic!
Designed to match the latest GATE pattern with topic-wise precision, difficulty tagging, and detailed solutions.
Q#1
PN Junction Theory
GATE EC 2003
MCQ
+2 marks
-0.66 marks
At 300 K, for a diode current of 1mA, a certain germanium diode requires a forward bias of 0.1435V, whereas a certain silicon diode requires a forward bias of 0.718V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is
1
5
Explanation Locked!
Unlock this branch to view the explanation, track, bookmark and more.
Sign in to Unlock
Login to keep track of your progress with the tool with daily goals, questions preparation and more.
Browse Practice Questions by Chapters / Topics in Browse Practice Questions by Chapters / Topics in GATE Electronics and Communications
Total Questions
Attempted
% Attempted
Correct
% Correct
Login to keep track of your progress with the tool with daily goals, questions preparation and more.
Login to track your progress, bookmark questions, and view history.