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Practice over 1000+ GATE-level questions from this topic!

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Q#1 PN Junction Theory GATE EC 2009 MCQ +2 marks -0.66 marks

Consider a silicon p-n junction at room temperature having the following parameters:

Doping on the n-side

Depletion width on the n-side

Depletion width on the p-side

Intrinsic carrier concentration

Thermal voltage = 26 mV

Permittivity of free space

Dielectric constant of silicon = 12

The built-in-potential of the junction

Is 0.70 V

Is 0.76 V

Is 0.82 V

Cannot be estimated from the data given

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