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Q#1
PN Junction Theory
GATE EC 2016
NAT
+2 marks
-0 marks
Consider a silicon p-n junction with a uniform acceptor doping concentration of 
on the p-side and a uniform donor doping concentration of 
on the n-side. No external voltage is applied to the diode. Given: kT/q = 26 mV, 
= 1.5 x 
, 
= 
, 
= 8.85 × 
and q = 1.6 × 
. The charge per unit junction area (nC 
) in the depletion region on the p-side is__________
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