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Practice over 1000+ GATE-level questions from this topic!

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Q#1 MOSFET GATE EC 2022 MCQ +2 marks -0.66 marks

Consider an ideal long channel nMOSFET (enhancement-mode) with gate length  and width . The product of electron mobility  and oxide capacitance per unit area  is . The threshold voltage of the transistor is 1V. For a gate-to-source voltage  and drain-to source voltage  (substrate connected to the source), the maximum value of the drain-to-source current is__________.

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Browse Practice Questions by Chapters / Topics in Browse Practice Questions by Chapters / Topics in GATE Electronics and Communications
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Topic Questions Attempted Correct
Network Analysis 273 0 0
Electronic Devices 224 0 0
Analog Electronics 395 0 0
Digital Electronics 352 0 0
Signals and Systems 263 0 0
Control Systems 264 0 0
Communication System 340 0 0
EMFT - ECE 273 0 0
Engineering Mathematics 280 0 0
General Aptitude 240 0 0
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