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Practice over 1000+ GATE-level questions from this topic!

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Q#1 PN Junction Theory GATE EC 2016 MCQ +2 marks -0.66 marks

Consider avalanche breakdown in a silicon  junction. The n-region is uniformly doped with a donor density. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field . Assume to be independent of. If the built-in voltage of the  junction is much smaller than the breakdown voltage, , the relationship between  and is given by

= constant

= constant

= constant

= constant

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