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Q#1 MOSFET - EDC GATE EC 1991 NAT +2 marks -0 marks

It is required to use a JFET of figure as linear resistor. The parameters of the JEET are as follows: , , . The doping in the n-layer is  and the electron mobility is. The depletion layer width of each junction due to the built in potential is. The two - gate regions are connected together externally. The resistances of the regions outside the gate are negligible. Determine the minimum value of the linear resistor, which can be realized using this JFET without forward biasing the gate junctions.

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