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Practice over 1000+ GATE-level questions from this topic!

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Q#1 Semiconductor Physics GATE EC 2008 MCQ +2 marks -0.66 marks

Silicon is doped with boron to a concentration of   atom/. Assume the intrinsic carrier concentration of silicon to be  and the value of  to be 25mV at 300 K. Compared to un-doped silicon, the Fermi level of doped silicon

Goes down by 0.13eV        

Goes up by 0.13eV

Goes down by 0.427eV        

Goes up by 0.427eV

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