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Q#1
PN Junction Theory
GATE EC 1993
MSQ
+2 marks
-0 marks
The built-in potential (Diffusion potential) in a p-n junction
Is equal to the difference in the Fermi level of the two sides, expressed in volts.
Increases with the increase in the doping levels of the two sides
Increases with an increase in temperature
Is equal to the average of the Fermi levels of the two sides
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