Loading...

Loading, please wait...

ExamDost
Learning Portal
Prep plan My packages

Practice over 1000+ GATE-level questions from this topic!

Designed to match the latest GATE pattern with topic-wise precision, difficulty tagging, and detailed solutions.

Q#1 PN Junction Theory GATE EC 1991 MSQ +2 marks -0 marks

The current I in a forward biased  junction shown in figure (a) is entirely due to diffusion of holes from  and . The injected hole concentration distribution in the n-region is linear as shown in figure (b), with  and .

Determine:

(a) The current density in the diode, assuming that the diffusion coefficient of holes is

(b) The velocity of holes in the n-region at.

C:\Users\ads\Desktop\ECE PY\diagram\c-2, q-3(a,b).jpg

(a) 

(b)

(a)

(b)

Sign in to see the solution

Log in to view the explanation, track your attempts, and keep your progress.

Sign in to Unlock
Browse Practice Questions by Chapters / Topics in Browse Practice Questions by Chapters / Topics in GATE Electronics and Communications
Total Questions

Attempted

% Attempted

Correct

% Correct

Topic Questions Attempted Correct
Network Analysis 273 0 0
Electronic Devices 224 0 0
Analog Electronics 395 0 0
Digital Electronics 352 0 0
Signals and Systems 263 0 0
Control Systems 264 0 0
Communication System 340 0 0
EMFT - ECE 273 0 0
Engineering Mathematics 280 0 0
General Aptitude 240 0 0