Loading, please wait...

ExamDost
Learning Portal
Let's Prepare Together!
#PreparationAmplified!
Explore Packages
ExamDost
Learning Portal
 Prep plan My packages

Practice over 1000+ GATE-level questions from this topic!

Designed to match the latest GATE pattern with topic-wise precision, difficulty tagging, and detailed solutions.

Q#1 Semiconductor Physics GATE EC 2017 NAT +2 marks -0 marks

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of and electronic charge . If a bias of 5 V is applied across a 1 µm region of this semiconductor, the resulting current density in this region, in , is ____________.

Z:\PY\ECE PY\All Updated figure\06-EDC\P-540 (57).jpg

Sign in to see the solution

Log in to view the explanation, track your attempts, and keep your progress.

Sign in to Unlock
Browse Practice Questions by Chapters / Topics in Browse Practice Questions by Chapters / Topics in GATE Electronics and Communications
Total Questions

Attempted

% Attempted

Correct

% Correct

Topic Questions Attempted Correct
Network Analysis 273 0 0
Electronic Devices 224 0 0
Analog Electronics 395 0 0
Digital Electronics 352 0 0
Signals and Systems 263 0 0
Control Systems 264 0 0
Communication System 340 0 0
EMFT - ECE 273 0 0
Engineering Mathematics 280 0 0
General Aptitude 240 0 0
Generate Personalized GATE Electronics and Communications Paper