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Q#1
PN Junction Theory
GATE EC 2014
MCQ
+2 marks
-0.66 marks
The donor and accepter impurities in an abrupt junction silicon diode are 
and 
, respectively. Assume that the intrinsic carrier concentration in silicon 
at 300 K, 
and the permittivity of silicon 
. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are
0.7 V and 
0.86 V and
0.7 V and 
0.86 V and
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