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Practice over 1000+ GATE-level questions from this topic!

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Q#1 PN Junction Theory GATE EC 2014 MCQ +2 marks -0.66 marks

The donor and accepter impurities in an abrupt junction silicon diode are  and , respectively. Assume that the intrinsic carrier concentration in silicon  at 300 K,   and the permittivity of silicon . The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are

0.7 V and

0.86 V and

0.7 V and

0.86 V and

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