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Q#1
PN Junction Theory
GATE EC 2014
MCQ
+2 marks
-0.66 marks
The doping concentrations on the p-side and n-side of a silicon diode are 
and 
, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon 
and 
. The electron concentration at the edge of the depletion region on the p-side is
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