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Practice over 1000+ GATE-level questions from this topic!

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Q#1 Semiconductor Physics GATE EC 1995 MCQ +1 mark -0.33 marks

The drift velocity of electrons, in silicon

Is proportional to the electric field for all values of electric field

Is independent of the electric field

Increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance

Increases linearly with electric field at low value of electric field and gradually saturates at higher values of electric field.

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