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Practice over 1000+ GATE-level questions from this topic!

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Q#1 BJT GATE EC 2016 NAT +2 marks -0 marks

The injected excess electron concentration profile in the base region of an NPN BJT, biased in the active region, is linear, as shown in the figure. If the area of the emitter-base junction is 0.001 , = 800  in the base region and depletion layer widths are negligible, then the collector current  (in mA) at room temperature is ____________

(Given: thermal voltage = 26 mV at room temperature, electronic charge q=1.6 × C)

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Network Analysis 273 0 0
Electronic Devices 224 0 0
Analog Electronics 395 0 0
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EMFT - ECE 273 0 0
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