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Q#1
PN Junction Theory
GATE EC 2014
MCQ
+2 marks
-0.66 marks
When a silicon diode having a doping concentration of 
on p-side and 
on n-side is reverse biased, the total depletion width is found to be 3 µm. Given that the permittivity of silicon is 
, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are
2.7 µm and 
0.3 µm and 
0.3 µm and 
2.1 µm and
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